A Novel 4.5F² Capacitorless Semiconductor Memory DeviceWANG, Peng-Fei; YI GONG.IEEE electron device letters. 2008, Vol 29, Num 12, pp 1347-1348, issn 0741-3106, 2 p.Article

Calcitonin gene related peptide (CGRP) inhibits norepinephrine induced apoptosis in cultured rat cardiomyocytes not via PKA or PKC pathwaysZHAO, Fu-Ping; ZHENG GUO; WANG, Peng-Fei et al.Neuroscience letters. 2010, Vol 482, Num 2, pp 163-166, issn 0304-3940, 4 p.Article

The tunneling field effect transistor (TFET) : The temperature dependence, the simulation model, and its applicationNIRSCHL, Thomas; WANG, Peng-Fei; HANSCH, Walter et al.IEEE International Symposium on Circuits and Systems. 2004, pp 713-716, isbn 0-7803-8251-X, 4 p.Conference Paper

Preparation and photoluminescence of the Ce-, Tb- and Gd-doped lanthanum borophosphate phosphorDING, Shi-Jin; ZHANG, David Wei; WANG, Peng-Fei et al.Materials chemistry and physics. 2001, Vol 68, Num 1-3, pp 98-104, issn 0254-0584Article

Flower-like Pb(Zr_0.52Ti_0.48)O₃ nanoparticles on the CoFe204 seedsZHOU, Jian-Ping; WANG, Peng-Fei; QIUA, Zhong-Cheng et al.Journal of crystal growth. 2008, Vol 310, Num 2, pp 508-512, issn 0022-0248, 5 p.Article

A new field of phase diagrams of stationary nonequilibrium statesWANG, Ji-Tao; WEI ZHANG, David; DING, Shi-Jin et al.Calphad. 2000, Vol 24, Num 4, pp 427-434, issn 0364-5916Article

Influence of HfAlO composition on memory effects of metal-oxide-semiconductor capacitors with Al₂O₃/HfAlO/Al₂O₃ layers and Pd electrodeGOU, Hong-Yan; SUN CHEN; DING, Shi-Jin et al.Thin solid films. 2013, Vol 529, pp 380-384, issn 0040-6090, 5 p.Conference Paper

Infections following damage control laparotomy with abdominal packingZHANG, Wen-Bo; NING LI; WANG, Peng-Fei et al.Scandinavian journal of infectious diseases. 2008, Vol 40, Num 11-12, pp 867-876, issn 0036-5548, 10 p.Article

Initial reaction mechanism of H-passivated Ge surface passivation by atomic layer deposition of Al₂O₃ and AlNYAN XU; LIN CHEN; SUN, Qing-Qing et al.Thin solid films. 2011, Vol 519, Num 18, pp 6000-6003, issn 0040-6090, 4 p.Article

Nonvolatile Metal-Oxide-Semiconductor Capacitors with Ru-RuO_x Composite Nanodots Embedded in Atomic-Layer-Deposited Al₂O₃ FilmsGOU, Hong-Yan; DING, Shi-Jin; YUE HUANG et al.Journal of electronic materials. 2010, Vol 39, Num 8, pp 1343-1350, issn 0361-5235, 8 p.Article

An amorphous SiCOF film with low dielectric constant prepared by plasma-enhanced chemical vapor depositionWANG, Peng-Fei; DING, Shi-Jin; WEI ZHANG, David et al.Thin solid films. 2001, Vol 385, Num 1-2, pp 115-119, issn 0040-6090Article

Controllable Filament With Electric Field Engineering for Resistive Switching UniformitySUN, Qing-Qing; GU, Jing-Jing; LIN CHEN et al.IEEE electron device letters. 2011, Vol 32, Num 9, pp 1167-1169, issn 0741-3106, 3 p.Article

Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories With Superior PerformanceLIN CHEN; YAN XU; SUN, Qing-Qing et al.IEEE electron device letters. 2010, Vol 31, Num 11, pp 1296-1298, issn 0741-3106, 3 p.Article

The influence of Ar addition on the structure of an a-SiOCF film prepared by plasma-enhanced chemical vapour depositionDING, Shi-Jin; WANG, Peng-Fei; WEI ZHANG, David et al.Journal of physics. D, Applied physics (Print). 2001, Vol 34, Num 2, pp 155-159, issn 0022-3727Article

A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing OperationWANG, Peng-Fei; XI LIN; LEI LIU et al.Science (Washington, D.C.). 2013, Vol 341, Num 6146, pp 640-643, issn 0036-8075, 4 p.Article

Application of the Laser Scanning Confocal Microscope in Fluorescent Film Sensor ResearchZHANG, Hong-Yant; LIU, Wei-Min; ZHAO, Wen-Wen et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7656, issn 0277-786X, isbn 978-0-8194-8086-6, 76560Y.1-76560Y, 3Conference Paper

The tunneling field effect transistor (TFET) used in a single-event-upset (SEU) insensitive 6 transistor sram cell in ultra-low voltage applicationsNIRSCHL, Thomas; HENZLER, Stephan; PACHA, Christian et al.IEEE conference on nanotechnology. 2004, pp 402-404, isbn 0-7803-8536-5, 1Vol, 3 p.Conference Paper

Spectroscopic and thermal properties of Yb³⁺ doped TeO₂-Bi₂O₃-Nb₂O₅ based tellurite glassesLIN, She-Bao; WANG, Peng-Fei; SHE, Jiang-Bo et al.Journal of luminescence. 2014, Vol 153, pp 29-33, issn 0022-2313, 5 p.Article

Toll-Like Receptor 4 Antagonist Attenuates Intracerebral Hemorrhage-Induced Brain InjuryWANG, Yan-Chun; WANG, Peng-Fei; HUANG FANG et al.Stroke (1970). 2013, Vol 44, Num 9, pp 2545-2552, issn 0039-2499, 8 p.Article

Implication of Substance P in myocardial contractile function during ischemia in ratsWANG, Li. -Li; ZHENG GUO; YI HAN et al.Regulatory peptides. 2011, Vol 167, Num 2-3, pp 185-191, issn 0167-0115, 7 p.Article

A novel self-refreshable capacitorless DRAM cell and its extended applicationsWANG, Peng-Fei; LEILIU; DONGPINGWU et al.Solid-state electronics. 2010, Vol 54, Num 9, pp 985-990, issn 0038-1101, 6 p.Conference Paper

Organic radical molecular solids based on [(TCNQ)_n] (n = 1 or 2) : Syntheses, crystal structures, magnetic properties and DFT analysesCHEN, You-Cun; WANG, Peng-Fei; LIU, Guang-Xiang et al.The Journal of physics and chemistry of solids. 2008, Vol 69, Num 10, pp 2445-2452, issn 0022-3697, 8 p.Article

Effects of thermal treatment on porous amorphous fluoropolymer film with a low dielectric constantDING, Shi-Jin; WANG, Peng-Fei; WAN, Xin-Gong et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 83, Num 1-3, pp 130-136, issn 0921-5107Article

A Novel 1T-1D DRAM Cell for Embedded ApplicationCAO, Cheng-Wei; ZANG, Song-Gan; XI LIN et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 5, pp 1304-1310, issn 0018-9383, 7 p.Article

Enhancement of Resistive Switching Characteristics in Al₂O₃-Based RRAM With Embedded Ruthenium NanocrystalsLIN CHEN; GOU, Hong-Yan; SUN, Qing-Qing et al.IEEE electron device letters. 2011, Vol 32, Num 6, pp 794-796, issn 0741-3106, 3 p.Article